FSGYC260R

Intersil Star*Power Rad Hard MOSFETs FSGYC260R have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs FSGYC260R offer the system designer both extremely low r_DS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star*Power Gold FETs combine this electrical capability with total dose radiation hardness up to 100K RADs while maintaining the guaranteed performance for SEE (Single Event Effects) which the Intersil FS families have always featured.

The Intersil family of Star*Power FETs FSGYC260R includes a series of devices in various voltage, current and package styles. The portfolio consists of Star*Power and Star*Power Gold products. Star*Power FETs FSGYC260R are optimized for total dose and r_DS(ON) while exhibiting SEE capability at full rated voltage up to an LET of 37. Star*Power Gold FETs have been optimized for SEE and Gate Charge combining SEE performance to 80% of the rated voltage for an LET of 82 with extremely low gate charge characteristics.

This MOSFET FSGYC260R is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. FSGYC260R is specifically designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, power distribution, motor drives and relay drivers as well as other power control and conditioning applications. As with conventional MOSFETs these Radiation Hardened MOSFETs offer ease of voltage control, fast switching speeds and ability to parallel switching devices.

Reliability screening FSGYC260R is available as either TXV or Space equivalent of MIL-S-19500.
 
Formerly available as type TA45230W.