MOSFET N-CH 100V 70A TO-3P
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Symbol | Parameter | Conditions | Ratings | Unit |
VDSS | Drain-source voltage | VGS = 0V |
100 | V |
VGSS | Gate-source voltage | VDS = 0V |
±20 | V |
ID | Drain current | 70 | A | |
IDM | Drain current (Pulsed) | 280 | A | |
IDA | Avalanche drain current (Pulsed) | L = 30H | 70 | A |
IS | Source current | 70 | A | |
ISM | Source current (Pulsed) | 280 | A | |
PD | Maximum power dissipation | 150 | W | |
Tch | Channel temperature | -55 ~ +150 | ||
Tstg | Storage temperature | -55 ~ +150 | ||
-- | Weight | Typical value | 4.8 | g |
Technical/Catalog Information | FS70SM-2 |
Vendor | Renesas Technology America |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 70A |
Rds On (Max) @ Id, Vgs | 20 mOhm @ 35A, 10V |
Input Capacitance (Ciss) @ Vds | 6540pF @ 10V |
Power - Max | 150W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | - |
Package / Case | TO-3P |
FET Feature | Standard |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | FS70SM 2 FS70SM2 |