MOSFET N-CH 60V 70A TO-3P
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ApplicationMotor control, Lamp control, Solenoid control DC-DC converter, etc.Specifications ...
Series: | - | Manufacturer: | Renesas Electronics America | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 19.5 dB | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Standard | Drain to Source Voltage (Vdss): | 60V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 70A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 7.5 mOhm @ 35A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 4V @ 1mA | Gate Charge (Qg) @ Vgs: | - | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 6540pF @ 10V | ||
Power - Max: | 150W | Mounting Type: | Through Hole | ||
Package / Case: | TO-3P-3, SC-65-3 | Supplier Device Package: | TO-3P |
Symbol | Parameter | Conditions | Ratings | Unit |
VDSS | Drain-source voltage | VGS = 0V |
60 | V |
VGSS | Gate-source voltage | VDS = 0V |
±20 | V |
ID | Drain current | 70 | A | |
IDM | Drain current (Pulsed) | 280 | A | |
IDA | Avalanche drain current (Pulsed) | L = 30H | 70 | A |
IS | Source current | 70 | A | |
ISM | Source current (Pulsed) | 280 | A | |
PD | Maximum power dissipation | 150 | W | |
Tch | Channel temperature | -55 ~ +150 | ||
Tstg | Storage temperature | -55 ~ +150 | ||
Viso | Isolation voltage | AC for 1minute, Terminal to case | 2000 | V |
-- | Weight | Typical value | 4.8 | g |