MOSFET -100V Single
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 100 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | - 6.6 A | ||
Resistance Drain-Source RDS (on) : | 0.41 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | IPAK | Packaging : | Tube |
Technical/Catalog Information | FQU8P10TU |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 6.6A |
Rds On (Max) @ Id, Vgs | 530 mOhm @ 3.3A, 10V |
Input Capacitance (Ciss) @ Vds | 470pF @ 25V |
Power - Max | 2.5W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 15nC @ 10V |
Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FQU8P10TU FQU8P10TU |