FQU8N25TU Selling Leads, Price trend , Fairchild Semiconductor, FQU8N25TU DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00163691 Detail

FQU8N25TU: MOSFET

FQU8N25TU Data Sheet

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Part Number:: FQU8N25TU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/10/31

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FQU8N25 evaluate
Features: • 6.2A, 250V, RDS(on) = 0.55Ω @VGS = 10 V• Low gate charge ( typical 1...
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Features: • -6.6A, -100V, RDS(on) = 0.53 @VGS = -10 V• Low gate charge ( typical 12 nC...
FQU8P10TU evaluate
MOSFET -100V Single

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	250 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	6.2 A
Resistance Drain-Source RDS (on) :	0.55 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	IPAK	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 6.2 A
Package / Case : IPAK
Resistance Drain-Source RDS (on) : 0.55 Ohms

Parameters:

Technical/Catalog Information	FQU8N25TU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	6.2A
Rds On (Max) @ Id, Vgs	550 mOhm @ 3.1A, 10V
Input Capacitance (Ciss) @ Vds	530pF @ 25V
Power - Max	2.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	15nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQU8N25TU FQU8N25TU

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FQU8N25TU

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