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FQU6N50C

Features: *4.5A, 500V, RDS(on) = 1.2 Ω @VGS = 10 V* Low gate charge (typical 19nC)*Low Crss (typical 15pF)* Fast switching*100% avalanche tested*Improved dv/dt capabilitySpecifications Symbol Parameter FQD6N50C /FQU6N50C Units VDSS Drain-Source Voltage 500 V ID Drain Curren...

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SeekIC No. : 004343393 Detail

FQU6N50C: Features: *4.5A, 500V, RDS(on) = 1.2 Ω @VGS = 10 V* Low gate charge (typical 19nC)*Low Crss (typical 15pF)* Fast switching*100% avalanche tested*Improved dv/dt capabilitySpecifications Sy...

FQU6N50C Data Sheet

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Part Number:
FQU6N50C
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

*4.5A, 500V, RDS(on) = 1.2 Ω @VGS = 10 V
* Low gate charge (typical 19nC)
* Low Crss (typical 15pF)
* Fast switching
*100% avalanche tested
*Improved dv/dt capability


Specifications

Symbol Parameter FQD6N50C /FQU6N50C Units
VDSS Drain-Source Voltage 500 V
ID Drain Current - Continuous (TC = 25)
- Continuous (TC = 100)		 4.5 A
2.7 A
IDM Drain Current - Pulsed (Note 1) 18 A
VGSS Gate-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy (Note 2) 300 mJ
IAR Avalanche Current (Note 1) 4.5 A
EAR Repetitive Avalanche Energy (Note 1) 6.1 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TA = 25) * 2.5 W
Power Dissipation (TC = 25)
- Derate above 25		 61 W
0.49 W/
TJ, TSTG Operating and Storage Temperature Range -55 to +150  
TL Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds		 300  



Description

    These N-Channel enhancement mode power field effect transistors of FQU6N50C are produced using Fairchildís proprietary, planar stripe,  DMOS technology.

    This advanced technology of FQU6N50C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQU6N50C is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.




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