Position: Home  > All Categories> Integrated Circuits (ICs) > FQU6N40C

FQU6N40C

Features: • 4.5A, 400V, RDS(on) = 1.0 Ω @VGS = 10 V• Low gate charge ( typical 16nC)• Low Crss ( typical 15pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQD6N40C /FQU6N40C Units VDSS Drain...

product image

FQU6N40C Picture
See larger image
SeekIC No. : 004343392 Detail

FQU6N40C: Features: • 4.5A, 400V, RDS(on) = 1.0 Ω @VGS = 10 V• Low gate charge ( typical 16nC)• Low Crss ( typical 15pF)• Fast switching• 100% avalanche tested• Impro...

FQU6N40C Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
FQU6N40C
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

•  4.5A, 400V, RDS(on) =   1.0 Ω @VGS = 10 V
• Low gate charge ( typical 16nC)
• Low Crss ( typical 15pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter FQD6N40C /FQU6N40C Units
VDSS Drain-Source Voltage 400 V
ID Drain Current - Continuous (TC = 25)
- Continuous (TC = 100)		 4.5 A
2.7 A
IDM Drain Current - Pulsed (Note 1) 18 A
VGSS Gate-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy (Note 2) 270 mJ
IAR Avalanche Current (Note 1) 4.5 A
EAR Repetitive Avalanche Energy (Note 1) 4.8 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5  V/ns
PD Power Dissipation (TA = 25) * 2.5 W
Power Dissipation (TC = 25)
- Derate above 25		 48 W
0.38 W/
TJ, TSTG Operating and Storage Temperature Range -55 to +150  
TL Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds		 300  



Description

    These N-Channel enhancement mode power field effect transistors of FQU6N40C are produced using Fairchild's proprietary, planar stripe,  DMOS technology.

    This advanced technology of FQU6N40C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQU6N40C is well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Kits
IT243
UVSC-110-4E1
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Line Protection, Backups
BX0023
A20B-1008-0550
Integrated Circuits (ICs)
TA8435H
1MB12-140
RF and RFID
X3C26P1-30S
1P620S
View more