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FQU6N40CTU_NBEA001

MOSFET 400V N-Channel

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SeekIC No. : 00163474 Detail

FQU6N40CTU_NBEA001: MOSFET 400V N-Channel

FQU6N40CTU_NBEA001 Data Sheet

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Part Number:
FQU6N40CTU_NBEA001
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 400 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 4.5 A
Resistance Drain-Source RDS (on) : 1 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 4.5 A
Package / Case : IPAK
Drain-Source Breakdown Voltage : 400 V
Resistance Drain-Source RDS (on) : 1 Ohms


Parameters:

Technical/Catalog InformationFQU6N40CTU_NBEA001
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)400V
Current - Continuous Drain (Id) @ 25° C4.5A
Rds On (Max) @ Id, Vgs1 Ohm @ 2.25A, 10V
Input Capacitance (Ciss) @ Vds 625pF @ 25V
Power - Max2.5W
PackagingTube
Gate Charge (Qg) @ Vgs20nC @ 10V
Package / CaseIPak, TO-251, DPak (3 straight short leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQU6N40CTU_NBEA001
FQU6N40CTU_NBEA001



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