MOSFET N-Ch 60V/ P-Ch 300V Dual QFET
FQS4900TF_Q: MOSFET N-Ch 60V/ P-Ch 300V Dual QFET
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | N and P-Channel | Drain-Source Breakdown Voltage : | + 60 V / - 300 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 1.3 A, - 0.3 A | ||
Resistance Drain-Source RDS (on) : | 0.39, 11.2 Ohms | Configuration : | Dual Dual Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOIC-8 Narrow | Packaging : | Reel |