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FQS4900TF: MOSFET N-Ch 60V/ P-Ch 300V Dual QFET

FQS4900TF Data Sheet

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Part Number:: FQS4900TF
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/5/28

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Recent History
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US $.3 - .36 / Piece

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US $.32 - .56 / Piece

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MOSFET N-Ch 60V/ P-Ch 300V Dual QFET

Product Details

Quick Details

Transistor Polarity :	N and P-Channel	Drain-Source Breakdown Voltage :	+ 60 V / - 300 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	1.3 A, - 0.3 A
Resistance Drain-Source RDS (on) :	0.39, 11.2 Ohms	Configuration :	Dual Dual Drain
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOP-8	Packaging :	Reel

Description

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Transistor Polarity : N and P-Channel
Configuration : Dual Dual Drain
Resistance Drain-Source RDS (on) : 0.39, 11.2 Ohms
Package / Case : SOP-8
Drain-Source Breakdown Voltage : + 60 V / - 300 V
Continuous Drain Current : 1.3 A, - 0.3 A

Parameters:

Technical/Catalog Information	FQS4900TF
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	60V, 300V
Current - Continuous Drain (Id) @ 25° C	1.3A, 300mA
Rds On (Max) @ Id, Vgs	550 mOhm @ 650mA, 10V
Input Capacitance (Ciss) @ Vds	-
Power - Max	2W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	2.1nC @ 5V
Package / Case	8-SOP
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQS4900TF FQS4900TF

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FQS4900TF

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