Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Drain-Source Breakdown Voltage
: 250 V
Package / Case
: TO-220
Gate-Source Breakdown Voltage
: +/- 30 V
Resistance Drain-Source RDS (on)
: 0.43 Ohms
Continuous Drain Current
: 8.8 A
Features: • 8.8A, 250V, RDS(on) = 0.43Ω @VGS = 10 V
• Low gate charge ( typical 26.5 nC)
• Low Crss ( typical 45.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capabilitySpecifications
| Symbol |
Parameter |
FQP9N25C |
FQPF9N25C |
Units |
| VDSS |
Drain-Source Voltage |
250 |
V |
| ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
8.8 |
8.8 *
|
A |
| 5.6 |
5.6 * |
A |
| IDM |
Drain Current - Pulsed (Note 1) |
35.2 |
35.2 * |
A |
| VGSS |
Gate-Source Voltage |
± 30 |
V |
| EAS |
Single Pulsed Avalanche Energy (Note 2) |
285 |
mJ |
| IAR |
Avalanche Current (Note 1) |
8.8 |
A |
| EAR |
Repetitive Avalanche Energy (Note 1) |
7.4 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns |
| PD |
Power Dissipation (TC = 25)
- Derate above 25 |
74 |
38 |
W |
| 0.59 |
0.3 |
W/ |
| TJ, TSTG |
Operating and Storage Temperature Range |
-55 to +150 |
|
| TL |
Maximum lead temperature for soldering purposes,
1/8' from case for 5 seconds |
300 |
|
DescriptionThese N-Channel enhancement mode power field effect transistors of FQP9N25C are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology of FQP9N25C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQP9N25C is well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.
Parameters: | Technical/Catalog Information | FQP9N25C |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 250V |
| Current - Continuous Drain (Id) @ 25° C | 8.8A |
| Rds On (Max) @ Id, Vgs | 430 mOhm @ 4.4A, 10V |
| Input Capacitance (Ciss) @ Vds | 710pF @ 25V |
| Power - Max | 74W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 35nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQP9N25C
FQP9N25C
|
FQP9N25C Data Sheet
