FQP90N10V2

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Continuous Drain Current : 90 A
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.01 Ohms


Features:

• 90 A, 100V, RDS(on) = 0.01Ω @VGS = 10 V
• Low gate charge ( typical 147 nC)
• Low Crss ( typical 300 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol	Parameter	FQP90N10V2	FQPF90N10V2	Units
VDSS	Drain-Source Voltage	100		V
ID	Drain Current - Continuous (TC = 25) - Continuous (TC = 100)	90	90*	A
		68	68*	A
IDM	Drain Current - Pulsed (Note 1)	360	360*	A
VGSS	Gate-Source Voltage	±30		V
EAS	Single Pulsed Avalanche Energy (Note 2)	2430		mJ
IAR	Avalanche Current (Note 1)	90		A
EAR	Repetitive Avalanche Energy (Note 1)	35		mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5		V/ns
PD	Power Dissipation (TC = 25) - Derate above 25	250	83	W
		1.67	0.55	W/
TJ, TSTG	Operating and Storage Temperature Range	-55 to +175
TL	Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds	300

Description

These N-Channel enhancement mode power field effect transistors of FQP90N10V2 are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology of FQP90N10V2 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQP90N10V2 is well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds(on) is required.



Parameters:

Technical/Catalog Information	FQP90N10V2
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	90A
Rds On (Max) @ Id, Vgs	10 mOhm @ 45A, 10V
Input Capacitance (Ciss) @ Vds	6150pF @ 25V
Power - Max	250W
Packaging	Tube
Gate Charge (Qg) @ Vgs	191nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQP90N10V2 FQP90N10V2