MOSFET 600V N-Ch Q-FET advance C-Series
FQP5N60C_Q: MOSFET 600V N-Ch Q-FET advance C-Series
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 4.5 A | ||
Resistance Drain-Source RDS (on) : | 2.5 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |