MOSFET 60V N-Channel QFET Logic Level
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 52 A | ||
Resistance Drain-Source RDS (on) : | 0.021 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |
Symbol | Parameter | FQP50N06L | Units |
VDSS | Drain-Source Voltage | 60 | V |
ID | Drain Current - Continuous (TC = 25) - Continuous (TC = 100) |
52.4 | A |
37.1 | A | ||
IDM | Drain Current - Pulsed (Note 1) | 210 | A |
VGSS | Gate-Source Voltage | ± 20 | V |
EAS | Single Pulsed Avalanche Energy (Note 2) | 990 | mJ |
IAR | Avalanche Current (Note 1) | 52.4 | A |
EAR | Repetitive Avalanche Energy (Note 1) | 12.1 | mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) | 7.0 | V/ns |
PD | Power Dissipation (TC = 25) - Derate above 25 |
121 | W |
0.81 | W/ | ||
TJ,TSTG | Operating and Storage Temperature Range | -55 to +175 | |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
These N-Channel enhancement mode power field effect transistors of FQP50N06L are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology FQP50N06L has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQP50N06L is well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
Technical/Catalog Information | FQP50N06L |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 52.4A |
Rds On (Max) @ Id, Vgs | 21 mOhm @ 26.2A, 10V |
Input Capacitance (Ciss) @ Vds | 1630pF @ 25V |
Power - Max | 121W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 32nC @ 5V |
Package / Case | TO-220 |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FQP50N06L FQP50N06L |