Transistor Polarity
: N-Channel
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Mounting Style
: Through Hole
Packaging
: Tube
Package / Case
: TO-220
Drain-Source Breakdown Voltage
: 60 V
Gate-Source Breakdown Voltage
: +/- 25 V
Continuous Drain Current
: 55 A
Resistance Drain-Source RDS (on)
: 0.02 Ohms
Features: * 55A, 60V, RDS(on) = 0.020 @VGS = 10 V
* Low gate charge ( typical 35 nC)
* Low Crss ( typical 85 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature ratingSpecifications
| Symbol |
Parameter |
FQP55N06 |
Units |
| VDSS |
Drain-Source Voltage |
60 |
V |
| ID |
Drain Current - Continuous (TC = 25)
- Continuous (TC = 100) |
55 |
A |
| 38.9 |
A |
| IDM |
Drain Current - Pulsed (Note 1) |
220 |
A |
| VGSS |
Gate-Source Voltage |
± 25 |
V |
| EAS |
Single Pulsed Avalanche Energy (Note 2) |
545 |
mJ |
| IAR |
Avalanche Current (Note 1) |
55 |
A |
| EAR |
Repetitive Avalanche Energy (Note 1) |
13.3 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
7.0 |
V/ns |
| PD |
Power Dissipation (TC = 25)
- Derate above 25 |
133 |
W |
| 0.89 |
W/ |
| TJ,TSTG |
Operating and Storage Temperature Range |
-55 to +175 |
|
| TL |
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds |
300 |
|
Description These N-Channel enhancement mode power field effect transistors of FQP55N06 are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology FQP55N06 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQP55N06 is well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
Parameters: | Technical/Catalog Information | FQP55N06 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 55A |
| Rds On (Max) @ Id, Vgs | 20 mOhm @ 27.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 1690pF @ 25V |
| Power - Max | 133W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 46nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQP55N06
FQP55N06
|
FQP55N06 Data Sheet
