FQP5N30

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 300 V
Continuous Drain Current : 5.4 A
Resistance Drain-Source RDS (on) : 0.9 Ohms


Features:

• 5.4A, 300V, R_DS(on) = 0.9Ω @V_GS = 10 V
• Low gate charge ( typical 9.8 nC)
• Low C_rss ( typical  9.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability



Specifications

Symbol	Parameter	FQP5N30	Units
VDSS	Drain-Source Voltage	300	V
ID	Drain Current - Continuous (TC = 25°C)                       - Continuous (TC  = 100°C)	5.4	A
		3.4	A
IDM	Drain Current - Pulsed          (Note 1)	21.6	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy  (Note 2)	340	mJ
IAR	Avalanche Current               (Note 1)	5.4	A
EAR	Repetitive Avalanche Energy     (Note 1)	7.0	mJ
dv/dt	Peak Diode Recovery dv/dt       (Note 3)	4.5	V/ns
PD	Power Dissipation (TC = 25°C)                            - Derate above 25°C	70	W
		0.56	W/
TJ, TSTG	Operating and Storage Temperature Range	-55 to +150	°C
TL	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300	°C

Description

These N-Channel enhancement mode power field effect transistors of FQP5N30 are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology of FQP5N30 is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. FQP5N30 is well suited for high efficiency switching DC/DC converters,switch mode power supply.

Parameters:

Technical/Catalog Information	FQP5N30
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25° C	5.4A
Rds On (Max) @ Id, Vgs	900 mOhm @ 2.7A, 10V
Input Capacitance (Ciss) @ Vds	430pF @ 25V
Power - Max	70W
Packaging	Tube
Gate Charge (Qg) @ Vgs	13nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQP5N30 FQP5N30