FQP4P40

MOSFET 400V P-Channel QFET

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SeekIC No. : 00149108 Detail

FQP4P40: MOSFET 400V P-Channel QFET

floor Price/Ceiling Price

US $ .46~.65 / Piece | Get Latest Price
Part Number:
FQP4P40
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

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  • 25~100
  • 100~250
  • Unit Price
  • $.65
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  • $.46
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/21

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 400 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 3.5 A
Resistance Drain-Source RDS (on) : 3.1 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 3.5 A
Drain-Source Breakdown Voltage : - 400 V
Resistance Drain-Source RDS (on) : 3.1 Ohms


Features:

• -3.5A, -400V, RDS(on) = 3.1Ω @VGS = -10 V
• Low gate charge ( typical 18 nC)
• Low Crss ( typical 11 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability





Specifications

Symbol
Parameter
FQP4P40
Units
VDSS
Drain-Source Voltage
-400
V
ID
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
-3.5
A
-2.2
A
IDM
Drain Current - Pulsed(Note 1)
-14
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy(Note 2)
260
mJ
IAR
Avalanche Current(Note 1)
-3.5
A
EAR
Repetitive Avalanche Energy (Note 1)
8.5
mJ
dv/dt
Peak Diode Recovery dv/dt (Note 3)
-4.5
V/ns
PD
Power Dissipation (TC = 25°C)
- Derate above 25°C
85
W
0.68
W/
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
300
°C





Description

These P-Channel enhancement mode power field effect transistors of FQP4P40 are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology FQP4P40 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQP4P40 is well suited for electronic lamp ballast based on complimentary half bridge.






Parameters:

Technical/Catalog InformationFQP4P40
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)400V
Current - Continuous Drain (Id) @ 25° C3.5A
Rds On (Max) @ Id, Vgs3.1 Ohm @ 1.75A, 10V
Input Capacitance (Ciss) @ Vds 680pF @ 25V
Power - Max85W
PackagingTube
Gate Charge (Qg) @ Vgs23nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQP4P40
FQP4P40



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