Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Package / Case
: TO-220AB
Gate-Source Breakdown Voltage
: +/- 30 V
Drain-Source Breakdown Voltage
: 600 V
Continuous Drain Current
: 4.4 A
Resistance Drain-Source RDS (on)
: 2.2 Ohms
Features: • 4.4A, 600V, RDS(on) = 2.2 @VGS = 10 V
• Low gate charge ( typical 15 nC)
• Low Crss ( typical 8.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capabilitySpecifications
|
Symbol |
Parameter |
FQP4N60 |
Units |
| VDSS |
Drain-Source Voltage |
600 |
V |
| ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
4.4 |
A |
|
2.8 |
A |
| IDM |
Drain Current - Pulsed (Note 1) |
17.6 |
A |
| VGSS |
Gate-Source Voltage |
± 30 |
V |
| EAS |
Single Pulsed Avalanche Energy (Note 2) |
260 |
mJ |
| IAR |
Avalanche Current (Note 1) |
4.4 |
A |
| EAR |
Repetitive Avalanche Energy (Note 1) |
10.6 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
| PD |
Power Dissipation (TC = 25°C)
- Derate above 25°C |
106 |
W |
|
0.85 |
W/°C |
| TJ, TSTG |
Operating and Storage Temperature Range |
-55 to +175 |
°C |
| TL |
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds |
300 |
°C |
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 25mH, IAS = 4.4A, VDD = 50V, RG = 25 , Starting TJ = 25°C
3. ISD 4.4A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25°CDescriptionThese N-Channel enhancement mode power field effect transistors of FQP4N60 are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQP4N60 is well suited for high efficiency switch mode power supply.
Parameters: | Technical/Catalog Information | FQP4N60 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 4.4A |
| Rds On (Max) @ Id, Vgs | 2.2 Ohm @ 2.2A, 10V |
| Input Capacitance (Ciss) @ Vds | 670pF @ 25V |
| Power - Max | 106W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 20nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQP4N60
FQP4N60
|
FQP4N60 Data Sheet
