FQP45N15V2

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 45 A
Resistance Drain-Source RDS (on) : 0.04 Ohms


Features:

` 45A, 150V, R<sub>DS(on)</sub> = 0.04 @V<sub>GS</sub> = 10 V
` Low gate charge ( typical 72 nC)
` Low Crss ( typical 135 pF)
` Fast switching
` 100% avalanche tested
` Improved dv/dt capability


Specifications

Symbol	Parameter	FQP45N15V2	FQPF45N15V2	Units
VDSS	Drain-Source Voltage	150		V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	45	45*	A
		31	31*	A
IDM	Drain Current - Pulsed (Note 1)	180	180*	A
VGSS	Gate-Source Voltage	± 30		V
EAS	Single Pulsed Avalanche Energy (Note 2)	1124		mJ
IAR	Avalanche Current (Note 1)	45		A
EAR	Repetitive Avalanche Energy (Note 1)	22		mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5		V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	220	66	W
		1.47	0.44	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55 to +175		°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300		°C

* Drain current limited by maximum junction temperature
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.74mH, I_AS = 45A, V_DD = 50V, R_G = 25 , Starting T_J = 25°C
3. I_SD 45A, di/dt 200A/s, V_DD BV_DSS, Starting T_J = 25°C


Description

These N-Channel enhancement mode power field effect transistors of FQP45N15V2 are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQP45N15V2 is well suited for DC to DC converters, sychronous rectification, and other applications lowest Rd (on) is required

Parameters:

Technical/Catalog Information	FQP45N15V2
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25° C	45A
Rds On (Max) @ Id, Vgs	40 mOhm @ 22.5A, 10V
Input Capacitance (Ciss) @ Vds	3030pF @ 25V
Power - Max	220W
Packaging	Tube
Gate Charge (Qg) @ Vgs	94nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQP45N15V2 FQP45N15V2