Position: Home  > All Categories> Integrated Circuits (ICs) > FQI5N90

FQI5N90

Features: • 5.4A, 900V, RDS(on) = 2.3 Ω @ VGS = 10 V• Low gate charge ( typical 31 nC)• Low Crss ( typical 13 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQB5N90 / FQI5N90 Units VDSS ...

product image

FQI5N90 Picture
See larger image
SeekIC No. : 004343307 Detail

FQI5N90: Features: • 5.4A, 900V, RDS(on) = 2.3 Ω @ VGS = 10 V• Low gate charge ( typical 31 nC)• Low Crss ( typical 13 pF)• Fast switching• 100% avalanche tested• Im...

FQI5N90 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
FQI5N90
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 5.4A, 900V, RDS(on) = 2.3 Ω @ VGS = 10 V
• Low gate charge ( typical 31 nC)
• Low Crss ( typical 13 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter
FQB5N90 / FQI5N90
Units
VDSS Drain-Source Voltage
900
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
5.4
A
3.42
A
IDM Drain Current - Pulsed (Note 1)
21.6
A
VGSS Gate-Source Voltage
± 30
V
EAS Single Pulsed Avalanche Energy (Note 2)
660
mJ
IAR Avalanche Current (Note 1)
5.4
A
EAR Repetitive Avalanche Energy (Note 1)
15.8
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
4.0
V/ns
PD Power Dissipation (TA = 25°C) *
3.13
W
Power Dissipation (TC = 25°C)
- Derate above 25°C
158
W
1.27
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+150
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These N-Channel enhancement mode power field effect transistors of FQI5N90 are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology of FQI5N90 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQI5N90 is well suited for high efficiency switch mode power supply.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Connectors, Interconnects
ASP-134488-01
WM4078-ND
RF and RFID
X3C26P1-30S
1P620S
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
Crystals and Oscillators
WT325BI0030.000000
2SB49
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
View more