FQI50N06TU

MOSFET 60V N-Channel QFET

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SeekIC No. : 00146973 Detail

FQI50N06TU: MOSFET 60V N-Channel QFET

floor Price/Ceiling Price

US $ .61~.98 / Piece | Get Latest Price
Part Number:
FQI50N06TU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.98
  • $.76
  • $.7
  • $.61
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 50 A
Resistance Drain-Source RDS (on) : 0.022 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-262 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 50 A
Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 25 V
Package / Case : TO-262
Resistance Drain-Source RDS (on) : 0.022 Ohms


Parameters:

Technical/Catalog InformationFQI50N06TU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C50A
Rds On (Max) @ Id, Vgs22 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds 1540pF @ 25V
Power - Max3.75W
PackagingTube
Gate Charge (Qg) @ Vgs41nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQI50N06TU
FQI50N06TU



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