Position: Home  > All Categories> Integrated Circuits (ICs) > FQI50N06L

FQI50N06L

Features: • 52.4A, 60V, RDS(on) = 0.021Ω @VGS = 10 V• Low gate charge ( typical 24.5 nC)• Low Crss ( typical 90 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability• 175°C maximum junction temperature ratingSpecifications Symbol...

product image

FQI50N06L Picture
See larger image
SeekIC No. : 004343299 Detail

FQI50N06L: Features: • 52.4A, 60V, RDS(on) = 0.021Ω @VGS = 10 V• Low gate charge ( typical 24.5 nC)• Low Crss ( typical 90 pF)• Fast switching• 100% avalanche tested• ...

FQI50N06L Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
FQI50N06L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/24

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 52.4A, 60V, RDS(on) = 0.021Ω @VGS = 10 V
• Low gate charge ( typical 24.5 nC)
• Low Crss ( typical 90 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating


Specifications

Symbol Parameter
FQB50N06L / FQI50N06L
Units
VDSS Drain-Source Voltage
60
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
52.4
A
37.1
A
IDM Drain Current - Pulsed (Note 1)
210
A
VGSS Gate-Source Voltage
±20
V
EAS Single Pulsed Avalanche Energy (Note 2)
990
mJ
IAR Avalanche Current (Note 1)
52.4
A
EAR Repetitive Avalanche Energy (Note 1)
12.1
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
7.0
V/ns
PD Power Dissipation (TA = 25°C) *
3.75
W
Power Dissipation (TC = 25°C)
- Derate above 25°C
121
W
0.81
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+175
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These N-Channel enhancement mode power field effect transistors of FQI50N06L are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology of FQI50N06L has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQI50N06L is well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
View more