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FQI1P50TU

MOSFET 500V P-Channel QFET

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SeekIC No. : 00160616 Detail

FQI1P50TU: MOSFET 500V P-Channel QFET

FQI1P50TU Data Sheet

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Part Number:
FQI1P50TU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : - 1.5 A
Resistance Drain-Source RDS (on) : 10.5 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-262 Packaging : Tube    

Description

Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : - 1.5 A
Package / Case : TO-262
Drain-Source Breakdown Voltage : - 500 V
Resistance Drain-Source RDS (on) : 10.5 Ohms


Parameters:

Technical/Catalog InformationFQI1P50TU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C1.5A
Rds On (Max) @ Id, Vgs10.5 Ohm @ 750mA, 10V
Input Capacitance (Ciss) @ Vds 350pF @ 25V
Power - Max3.13W
PackagingTube
Gate Charge (Qg) @ Vgs14nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQI1P50TU
FQI1P50TU



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