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FQI10N20CTU

MOSFET N-CH/200V/10A/QFET

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SeekIC No. : 00163557 Detail

FQI10N20CTU: MOSFET N-CH/200V/10A/QFET

FQI10N20CTU Data Sheet

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Part Number:
FQI10N20CTU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 9.5 A
Resistance Drain-Source RDS (on) : 0.29 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : I2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 9.5 A
Package / Case : I2PAK
Resistance Drain-Source RDS (on) : 0.29 Ohms


Parameters:

Technical/Catalog InformationFQI10N20CTU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C9.5A
Rds On (Max) @ Id, Vgs360 mOhm @ 4.75A, 10V
Input Capacitance (Ciss) @ Vds 510pF @ 25V
Power - Max72W
PackagingTube
Gate Charge (Qg) @ Vgs26nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQI10N20CTU
FQI10N20CTU



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