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FQI19N20TU

MOSFET 200V N-Channel QFET

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SeekIC No. : 00162219 Detail

FQI19N20TU: MOSFET 200V N-Channel QFET

FQI19N20TU Data Sheet

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Part Number:
FQI19N20TU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 19.4 A
Resistance Drain-Source RDS (on) : 0.12 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-262 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-262
Continuous Drain Current : 19.4 A
Resistance Drain-Source RDS (on) : 0.12 Ohms


Parameters:

Technical/Catalog InformationFQI19N20TU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C19.4A
Rds On (Max) @ Id, Vgs150 mOhm @ 9.7A, 10V
Input Capacitance (Ciss) @ Vds 1600pF @ 25V
Power - Max3.13W
PackagingTube
Gate Charge (Qg) @ Vgs40nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQI19N20TU
FQI19N20TU



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