FQI17P06TU, US $ .32-.69 , Fairchild Semiconductor, FQI17P06TU DataSheet download, circuit diagram from SeekIC.com

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FQI17P06TU: MOSFET -60V Single

FQI17P06TU Data Sheet

US $ .32~.69 / Piece | Get Latest Price

Part Number:: FQI17P06TU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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What is this?

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Product Details

Quick Details

Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	- 60 V
Gate-Source Breakdown Voltage :	+/- 25 V	Continuous Drain Current :	- 17 A
Resistance Drain-Source RDS (on) :	0.12 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	Through Hole
Package / Case :	TO-262	Packaging :	Tube

Description

Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Packaging : Tube
Drain-Source Breakdown Voltage : - 60 V
Gate-Source Breakdown Voltage : +/- 25 V
Package / Case : TO-262
Continuous Drain Current : - 17 A
Resistance Drain-Source RDS (on) : 0.12 Ohms

Parameters:

Technical/Catalog Information	FQI17P06TU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	17A
Rds On (Max) @ Id, Vgs	120 mOhm @ 8.5A,10V
Input Capacitance (Ciss) @ Vds	900pF @ 25V
Power - Max	3.75W
Packaging	Tube
Gate Charge (Qg) @ Vgs	27nC @ 10V
Package / Case	I²Pak, TO-262 (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQI17P06TU FQI17P06TU

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