FQI16N25CTU

MOSFET N-CH/250V/16A/QFET

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FQI16N25CTU: MOSFET N-CH/250V/16A/QFET

floor Price/Ceiling Price

US $ .41~.83 / Piece | Get Latest Price
Part Number:
FQI16N25CTU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.83
  • $.68
  • $.55
  • $.41
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 15.6 A
Resistance Drain-Source RDS (on) : 0.22 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : I2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : I2PAK
Resistance Drain-Source RDS (on) : 0.22 Ohms
Continuous Drain Current : 15.6 A


Parameters:

Technical/Catalog InformationFQI16N25CTU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25° C15.6A
Rds On (Max) @ Id, Vgs270 mOhm @ 7.8A, 10V
Input Capacitance (Ciss) @ Vds 1080pF @ 25V
Power - Max3.13W
PackagingTube
Gate Charge (Qg) @ Vgs53.5nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQI16N25CTU
FQI16N25CTU



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