MOSFET 60V N-Channel QFET Logic Level
FQI13N06LTU: MOSFET 60V N-Channel QFET Logic Level
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 13.6 A | ||
Resistance Drain-Source RDS (on) : | 0.11 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | I2PAK | Packaging : | Tube |
Technical/Catalog Information | FQI13N06LTU |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 13.6A |
Rds On (Max) @ Id, Vgs | 110 mOhm @ 6.8A, 10V |
Input Capacitance (Ciss) @ Vds | 350pF @ 25V |
Power - Max | 3.75W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 6.4nC @ 5V |
Package / Case | I²Pak, TO-262 (3 straight leads + tab) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FQI13N06LTU FQI13N06LTU |