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FQI12N50TU

MOSFET N-CH 500V 12.1A I2PAK

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SeekIC No. : 003433765 Detail

FQI12N50TU: MOSFET N-CH 500V 12.1A I2PAK

FQI12N50TU Data Sheet

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Part Number:
FQI12N50TU
Mfg:
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Series: QFET™ Manufacturer: Fairchild Semiconductor
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 500V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 12.1A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 490 mOhm @ 6.05A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) @ Vgs: 51nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 2020pF @ 25V
Power - Max: 3.13W Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: I2PAK    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Packaging: Tube
Mounting Type: Through Hole
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) @ Vgs: 51nC @ 10V
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK
Input Capacitance (Ciss) @ Vds: 2020pF @ 25V
Manufacturer: Fairchild Semiconductor
Series: QFET™
Power - Max: 3.13W
Current - Continuous Drain (Id) @ 25° C: 12.1A
Rds On (Max) @ Id, Vgs: 490 mOhm @ 6.05A, 10V


Parameters:

Technical/Catalog InformationFQI12N50TU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C12.1A
Rds On (Max) @ Id, Vgs490 mOhm @ 6.05A, 10V
Input Capacitance (Ciss) @ Vds 2020pF @ 25V
Power - Max3.13W
PackagingTube
Gate Charge (Qg) @ Vgs51nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQI12N50TU
FQI12N50TU



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