FQE10N20LCTU

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Current - Continuous Drain (Id) @ 25° C: 4A
Vgs(th) (Max) @ Id: 2V @ 250µA
Drain to Source Voltage (Vdss): 200V
Input Capacitance (Ciss) @ Vds: 490pF @ 25V
Packaging: Tube
Mounting Type: Through Hole
Manufacturer: Fairchild Semiconductor
Series: QFET™
Gate Charge (Qg) @ Vgs: 19nC @ 5V
Rds On (Max) @ Id, Vgs: 360 mOhm @ 2A, 10V
Power - Max: 12.8W
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126


Parameters:

Technical/Catalog Information	FQE10N20LCTU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	4A
Rds On (Max) @ Id, Vgs	360 mOhm @ 2A, 10V
Input Capacitance (Ciss) @ Vds	490pF @ 25V
Power - Max	12.8W
Packaging	Tube
Gate Charge (Qg) @ Vgs	19nC @ 5V
Package / Case	TO-126
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQE10N20LCTU FQE10N20LCTU