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FQE10N20C

Features: • 4.0A, 200V, RDS(on) = 0.36Ω @VGS = 10 V• Low gate charge ( typical 20 nC)• Low Crss ( typical 40.5 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQE10N20C Units VDSS Drain-Sourc...

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SeekIC No. : 004343232 Detail

FQE10N20C: Features: • 4.0A, 200V, RDS(on) = 0.36Ω @VGS = 10 V• Low gate charge ( typical 20 nC)• Low Crss ( typical 40.5 pF)• Fast switching• 100% avalanche tested• I...

FQE10N20C Data Sheet

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Part Number:
FQE10N20C
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 4.0A, 200V, RDS(on) = 0.36Ω @VGS = 10 V
• Low gate charge ( typical  20 nC)
• Low Crss ( typical  40.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter FQE10N20C Units
VDSS Drain-Source Voltage 200 V
ID Drain Current - Continuous (TC = 25)
- Continuous (TC = 100)		 4.0 A
2.5 A
IDM Drain Current - Pulsed (Note 1) 16 A
VGSS Gate-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy (Note 2) 320 mJ
IAR Avalanche Current (Note 1) 4.0 A
EAR Repetitive Avalanche Energy (Note 1) 1.28 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
PD Power Dissipation (TC = 25)
- Derate above 25		 12.8 W
0.10 W/
TJ, TSTG Operating and Storage Temperature Range -55 to +150
TL Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds		 300



Description

    These N-Channel enhancement mode power FQE10N20C field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

    This advanced technology FQE10N20C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQE10N20C is well suited for high efficiency switching DC/DC converters,switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.




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