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FQD7P20TF: MOSFET 200V P-Channel QFET

FQD7P20TF Data Sheet

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Part Number:: FQD7P20TF
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/12/26

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MOSFET 100V N-Ch QFET Logic Level

Product Details

Quick Details

Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	- 200 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	- 5.7 A
Resistance Drain-Source RDS (on) :	0.69 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	TO-252	Packaging :	Reel

Description

Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-252
Drain-Source Breakdown Voltage : - 200 V
Resistance Drain-Source RDS (on) : 0.69 Ohms
Continuous Drain Current : - 5.7 A

Parameters:

Technical/Catalog Information	FQD7P20TF
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	5.7A
Rds On (Max) @ Id, Vgs	690 mOhm @ 2.85A, 10V
Input Capacitance (Ciss) @ Vds	770pF @ 25V
Power - Max	2.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	25nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQD7P20TF FQD7P20TF

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