Features: • 5.8A, 100V, RDS(on) = 0.35 @VGS = 10 V• Low gate charge ( typical 4.6 nC)• Low Crss ( typical 12 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability• Low level gate drive requirments allowing direct operation from logic drives...
FQD7N10L: Features: • 5.8A, 100V, RDS(on) = 0.35 @VGS = 10 V• Low gate charge ( typical 4.6 nC)• Low Crss ( typical 12 pF)• Fast switching• 100% avalanche tested• Improved ...
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Symbol |
Parameter |
FQD7N10L / FQU7N10L |
Units | ||
VDSS |
Drain-Source Voltage |
100 |
V | ||
ID |
Drain Current |
- Continuous (TC =25°C) |
5.8 |
A | |
|
- Continuous (TC = 100°C) |
3.67 |
A | ||
IDM |
Drain Current Pulsed (Note 1) |
23.2 |
A | ||
VGSS |
Gate-Source Voltage |
± 20 |
V | ||
EAS |
Single Pulsed Avalanche Energy (Note 2) |
50 |
mJ | ||
IAR |
Avalanche Current (Note 1) |
5.8 |
A | ||
EAR |
Repetitive Avalanche Energy (Note 1) |
2.5 |
mJ | ||
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
6.0 |
V/ns | ||
PD |
Power Dissipation (TA = 25°C) |
2..5 |
W | ||
Power Dissipation (TC = 25°C) |
25 |
W | |||
TJ, TSTG |
Operating and |
-55 to +150 |
°C | ||
TL |
Maximum lead temperature for soldering purposes, |
300 |
°C |
These N-Channel enhancement mode power FQD7N10L field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. FQD7N10L is well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control.