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FQD5P10TF

MOSFET 100V P-Channel QFET

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SeekIC No. : 00163837 Detail

FQD5P10TF: MOSFET 100V P-Channel QFET

FQD5P10TF Data Sheet

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Part Number:
FQD5P10TF
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 100 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : - 3.6 A
Resistance Drain-Source RDS (on) : 1.05 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Reel    

Description

Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-252
Resistance Drain-Source RDS (on) : 1.05 Ohms
Drain-Source Breakdown Voltage : - 100 V
Continuous Drain Current : - 3.6 A


Parameters:

Technical/Catalog InformationFQD5P10TF
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C3.6A
Rds On (Max) @ Id, Vgs1.05 Ohm @ 1.8A, 10V
Input Capacitance (Ciss) @ Vds 250pF @ 25V
Power - Max2.5W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs8.2nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQD5P10TF
FQD5P10TF



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