FQD5N20L

Symbol

Parameter

FQD5N20L / FQU5N20L

Units

V_DSS

Drain-Source Voltage

200

V

I_D

Drain Current

- Continuous (TC = 100°C)

3.8

A

- Continuous (TC = 25°C)

2.4

A

I_DM

Drain Current Pulsed                     (Note 1)

15.2

A

V_GSS

Gate-Source Voltage

± 20

V

E_AS

Single Pulsed Avalanche Energy            (Note 2)

60

mJ

I_AR

Avalanche Current                         (Note 1)

3.8

A

E_AR

Repetitive Avalanche Energy                (Note 1)

3,7

mJ

d _v/dt

Peak Diode Recovery dv/dt                  (Note 3)

5.5

V/ns

P_D

T_{J, TSTG}

Power Dissipation (TA = 25°C)

2.5

W

Power Dissipation (TC = 25°C)
- Derate above 25°C

37

W
W/°C

0.29

Operating and Storage Temperature Range

-55 to +150

°C

T_L

Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds

300

°C