Features: • 5.8A, 900V, RDS(on) = 1.9Ω @VGS = 10 V• Low gate charge ( typical 40 nC)• Low Crss ( typical 17 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQB6N90 / FQI6N90 Units VDSS D...
FQB6N90: Features: • 5.8A, 900V, RDS(on) = 1.9Ω @VGS = 10 V• Low gate charge ( typical 40 nC)• Low Crss ( typical 17 pF)• Fast switching• 100% avalanche tested• Impr...
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Symbol | Parameter |
FQB6N90 / FQI6N90 |
Units |
VDSS | Drain-Source Voltage |
900 |
V |
ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
5.8 |
A |
3.7 |
A | ||
IDM | Drain Current - Pulsed (Note 1) |
23.2 |
A |
VGSS | Gate-Source Voltage |
± 30 |
V |
EAS | Single Pulsed Avalanche Energy (Note 2) |
712 |
mJ |
IAR | Avalanche Current (Note 1) |
5.8 |
A |
EAR | Repetitive Avalanche Energy (Note 1) |
16.7 |
mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.0 |
V/ns |
PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
Power Dissipation (TC = 25°C) - Derate above 25°C |
167 |
W | |
1.34 |
W/°C | ||
TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
These N-Channel enhancement mode power FQB6N90 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology FQB6N90 is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. FQB6N90 is well suited for high efficiency switch mode power supplies.