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FQB6N60TM

MOSFET 600V N-Channel QFET

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SeekIC No. : 00161295 Detail

FQB6N60TM: MOSFET 600V N-Channel QFET

FQB6N60TM Data Sheet

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Part Number:
FQB6N60TM
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/9

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 6.2 A
Resistance Drain-Source RDS (on) : 1.5 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 1.5 Ohms
Continuous Drain Current : 6.2 A
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-263


Parameters:

Technical/Catalog InformationFQB6N60TM
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C6.2A
Rds On (Max) @ Id, Vgs1.5 Ohm @ 3.1A, 10V
Input Capacitance (Ciss) @ Vds 1000pF @ 25V
Power - Max3.13W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs25nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQB6N60TM
FQB6N60TM



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