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FQB6N40C

Features: • 6A, 400V, RDS(on) = 1.0 Ω @VGS = 10 V• Low gate charge ( typical 16nC)• Low Crss ( typical 15pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQB6N40C/FQI6N40C Units VDSS Drai...

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SeekIC No. : 004343144 Detail

FQB6N40C: Features: • 6A, 400V, RDS(on) = 1.0 Ω @VGS = 10 V• Low gate charge ( typical 16nC)• Low Crss ( typical 15pF)• Fast switching• 100% avalanche tested• Improve...

FQB6N40C Data Sheet

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Part Number:
FQB6N40C
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• 6A, 400V, RDS(on) = 1.0 Ω @VGS = 10 V
• Low gate charge ( typical 16nC)
• Low Crss ( typical 15pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter
FQB6N40C/FQI6N40C
Units
VDSS Drain-Source Voltage
400
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
6
A
3.6
A
IDM Drain Current - Pulsed (Note 1)
24
A
VGSS Gate-Source Voltage
± 30
V
EAS Single Pulsed Avalanche Energy (Note 2)
270
mJ
IAR Avalanche Current (Note 1)
6
A
EAR Repetitive Avalanche Energy (Note 1)
7.3
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
4.5
V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
73
W
0.58
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+150
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These N-Channel enhancement mode power FQB6N40C field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology FQB6N40C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQB6N40C is well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.




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