FQB2N30TM, US $ .29-.6 , Fairchild Semiconductor, FQB2N30TM DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00151625 Detail

FQB2N30TM: MOSFET N-CH/300V/2.1A/3.7OHM

FQB2N30TM Data Sheet

US $ .29~.6 / Piece | Get Latest Price

Part Number:: FQB2N30TM
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/12/21

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What is this?

FQB20N06 evaluate
Features: • 20A, 60V, RDS(on) = 0.06Ω @VGS = 10 V• Low gate charge ( typical 11....
FQB20N06L evaluate
Features: • 21A, 60V, RDS(on) = 0.055Ω @VGS = 10 V• Low gate charge ( typical 9....
FQB20N06LTM evaluate
MOSFET 60V N-Channel QFET Logic Level

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	300 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	2.1 A
Resistance Drain-Source RDS (on) :	3.7 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	TO-263	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-263
Drain-Source Breakdown Voltage : 300 V
Continuous Drain Current : 2.1 A
Resistance Drain-Source RDS (on) : 3.7 Ohms

Parameters:

Technical/Catalog Information	FQB2N30TM
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25° C	2.1A
Rds On (Max) @ Id, Vgs	3.7 Ohm @ 1.05A, 10V
Input Capacitance (Ciss) @ Vds	130pF @ 25V
Power - Max	3.13W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	5nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQB2N30TM FQB2N30TM

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