FQB22P10TM, US $ .39-.7 , Fairchild Semiconductor, FQB22P10TM DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00146300 Detail

FQB22P10TM: MOSFET 100V P-Channel QFET

FQB22P10TM Data Sheet

US $ .39~.7 / Piece | Get Latest Price

Part Number:: FQB22P10TM
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/12/21

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What is this?

FQB20N06 evaluate
Features: • 20A, 60V, RDS(on) = 0.06Ω @VGS = 10 V• Low gate charge ( typical 11....
FQB20N06L evaluate
Features: • 21A, 60V, RDS(on) = 0.055Ω @VGS = 10 V• Low gate charge ( typical 9....
FQB20N06LTM evaluate
MOSFET 60V N-Channel QFET Logic Level

Product Details

Quick Details

Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	- 100 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	- 22 A
Resistance Drain-Source RDS (on) :	0.125 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	SMD/SMT
Package / Case :	D2PAK	Packaging :	Reel

Description

Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Transistor Polarity : P-Channel
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : - 100 V
Continuous Drain Current : - 22 A
Resistance Drain-Source RDS (on) : 0.125 Ohms

Parameters:

Technical/Catalog Information	FQB22P10TM
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	22A
Rds On (Max) @ Id, Vgs	125 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds	1500pF @ 25V
Power - Max	3.75W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	50nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQB22P10TM FQB22P10TM FQB22P10TMDKR ND FQB22P10TMDKRND FQB22P10TMDKR

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FQB22P10TM

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