Position: Home  > All Categories> Integrated Circuits (ICs) > FQB13N10

FQB13N10

Features: • 12.8A, 100V, RDS(on) = 0.18Ω @VGS = 10 V• Low gate charge ( typical 12 nC)• Low Crss ( typical 20 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability• 175°C maximum junction temperature ratingSpecifications Symbol ...

product image

FQB13N10 Picture
See larger image
SeekIC No. : 004343082 Detail

FQB13N10: Features: • 12.8A, 100V, RDS(on) = 0.18Ω @VGS = 10 V• Low gate charge ( typical 12 nC)• Low Crss ( typical 20 pF)• Fast switching• 100% avalanche tested• Im...

FQB13N10 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
FQB13N10
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 12.8A, 100V, RDS(on) = 0.18Ω @VGS = 10 V
• Low gate charge ( typical 12 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating


Specifications

Symbol Parameter
FQB13N10 / FQI13N10
Units
VDSS Drain-Source Voltage
100
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
12.8
A
9.05
A
IDM Drain Current - Pulsed (Note 1)
51.2
A
VGSS Gate-Source Voltage
± 25
V
EAS Single Pulsed Avalanche Energy (Note 2)
95
mJ
IAR Avalanche Current (Note 1)
12.8
A
EAR Repetitive Avalanche Energy (Note 1)
6.5
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
6.0
V/ns
PD Power Dissipation (TA = 25°C) *
3.75
W
Power Dissipation (TC = 25°C)
- Derate above 25°C
65
W
0.43
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+175
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These N-Channel enhancement mode power FQB13N10 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
 
This advanced technology FQB13N10 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the av alanche and commutation modes. FQB13N10 is well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Power Supplies - Board Mount
HC-06
PM150RSA060-S81AH0G
Tools
TCP202
G084SN05 V.3
Switches
US32DMRJ
HBGQ22P-11ET
Optical Inspection Equipment
AA924
A21K4B
LED Products
LM24P20
KCG057QV1DB-G770
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
View more