FQB11P06TM

MOSFET 60V P-Channel QFET

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SeekIC No. : 00149431 Detail

FQB11P06TM: MOSFET 60V P-Channel QFET

floor Price/Ceiling Price

US $ .22~.5 / Piece | Get Latest Price
Part Number:
FQB11P06TM
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 100~250
  • Unit Price
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  • Processing time
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Total Cost: $ 0.00

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Upload time: 2024/6/2

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 60 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : - 11.4 A
Resistance Drain-Source RDS (on) : 0.14 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Package / Case : TO-263
Drain-Source Breakdown Voltage : - 60 V
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.14 Ohms
Continuous Drain Current : - 11.4 A


Parameters:

Technical/Catalog InformationFQB11P06TM
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C11.4A
Rds On (Max) @ Id, Vgs175 mOhm @ 5.7A, 10V
Input Capacitance (Ciss) @ Vds 550pF @ 25V
Power - Max3.13W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs17nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQB11P06TM
FQB11P06TM



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