Configuration
: Single
Mounting Style
: Through Hole
Transistor Polarity
: P-Channel
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Gate-Source Breakdown Voltage
: +/- 30 V
Package / Case
: TO-3PN
Continuous Drain Current
: 10.5 A
Drain-Source Breakdown Voltage
: - 250 V
Resistance Drain-Source RDS (on)
: 0.62 Ohms
Features: *-10.5A, -250V, RDS(on) = 0.62 @VGS =-10 V
* Low gate charge ( typical 29 nC)
* Low Crss ( typical 27 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability Specifications
|
Symbol |
Parameter |
FQA9P25 |
Units |
|
VDSS |
Drain-Source Voltage |
-250 |
V |
|
ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
-10.5 |
A |
|
-6.6 |
A |
|
IDM |
Drain Current - Pulsed (Note 1) |
-42 |
A |
|
VGSS |
Gate-Source Voltage |
± 30 |
V |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
650 |
mJ |
|
IAR |
Avalanche Current (Note 1) |
-10.5 |
A |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
15 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
-5.5 |
V/ns |
|
PD |
Power Dissipation (TC = 25°C)
- Derate above 25°C |
150 |
W |
|
1.2 |
W/ |
|
TJ,TSTG |
Operating and Storage Temperature Range |
-55 to+150 |
|
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
|
Description These N-Channel enhancement mode power FQA9P25 field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology FQA9P25 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQA9P25 is well suited for high efficiency switching DC/DC converters and switch mode power supplies.
Parameters: | Technical/Catalog Information | FQA9P25 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 250V |
| Current - Continuous Drain (Id) @ 25° C | 10.5A |
| Rds On (Max) @ Id, Vgs | 620 mOhm @ 5.25A, 10V |
| Input Capacitance (Ciss) @ Vds | 1180pF @ 25V |
| Power - Max | 150W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 38nC @ 10V |
| Package / Case | TO-3P |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQA9P25
FQA9P25
|
FQA9P25 Data Sheet
