FQA90N08

MOSFET 80V N-Channel QFET

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SeekIC No. : 00159600 Detail

FQA90N08: MOSFET 80V N-Channel QFET

floor Price/Ceiling Price

Part Number:
FQA90N08
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 80 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 90 A
Resistance Drain-Source RDS (on) : 0.016 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-3PN Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Continuous Drain Current : 90 A
Packaging : Tube
Drain-Source Breakdown Voltage : 80 V
Gate-Source Breakdown Voltage : +/- 25 V
Package / Case : TO-3PN
Resistance Drain-Source RDS (on) : 0.016 Ohms


Features:

• 90A, 80V, RDS(on) = 0.016Ω @VGS = 10 V
• Low gate charge ( typical 84 nC)
• Low Crss ( typical 200 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating



Specifications

Symbol Parameter
FQA90N08
Units
VDSS Drain-Source Voltage
80
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
90
A
63.5
A
IDM Drain Current - Pulsed (Note 1)
360
A
VGSS Gate-Source Voltage
±25
V
EAS Single Pulsed Avalanche Energy (Note 2)
1360
mJ
IAR Avalanche Current (Note 1)
90
A
EAR Repetitive Avalanche Energy (Note 1)
21.4
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
6.5
V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
214
W
1.43
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+175
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These N-Channel enhancement mode power FQA90N08 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology FQA90N08 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. FQA90N08 is well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.




Parameters:

Technical/Catalog InformationFQA90N08
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25° C90A
Rds On (Max) @ Id, Vgs16 mOhm @ 45A, 10V
Input Capacitance (Ciss) @ Vds 3250pF @ 25V
Power - Max214W
PackagingTube
Gate Charge (Qg) @ Vgs110nC @ 10V
Package / CaseTO-3PN
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQA90N08
FQA90N08



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