MOSFET 80V N-Channel QFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 80 V | ||
Gate-Source Breakdown Voltage : | +/- 25 V | Continuous Drain Current : | 90 A | ||
Resistance Drain-Source RDS (on) : | 0.016 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-3PN | Packaging : | Tube |
Symbol | Parameter |
FQA90N08 |
Units |
VDSS | Drain-Source Voltage |
80 |
V |
ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
90 |
A |
63.5 |
A | ||
IDM | Drain Current - Pulsed (Note 1) |
360 |
A |
VGSS | Gate-Source Voltage |
±25 |
V |
EAS | Single Pulsed Avalanche Energy (Note 2) |
1360 |
mJ |
IAR | Avalanche Current (Note 1) |
90 |
A |
EAR | Repetitive Avalanche Energy (Note 1) |
21.4 |
mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) |
6.5 |
V/ns |
PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
214 |
W |
1.43 |
W/°C | ||
TJ, TSTG | Operating and Storage Temperature Range |
-55to+175 |
°C |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
These N-Channel enhancement mode power FQA90N08 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology FQA90N08 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. FQA90N08 is well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
Technical/Catalog Information | FQA90N08 |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25° C | 90A |
Rds On (Max) @ Id, Vgs | 16 mOhm @ 45A, 10V |
Input Capacitance (Ciss) @ Vds | 3250pF @ 25V |
Power - Max | 214W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 110nC @ 10V |
Package / Case | TO-3PN |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FQA90N08 FQA90N08 |