FQA90N10V2

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 105 A
Package / Case : TO-3P
Resistance Drain-Source RDS (on) : 0.01 Ohms


Features:

* 105A, 100V, R_DS(on)  = 10m @V_GS  = 10 V 
* Low gate charge ( typical  147 nC)
* Low Crss ( typical  300 pF)
*Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating


Specifications

Symbol	Parameter	FQA90N10V2	Units
VDSS	Drain-Source Voltage	100	V
ID	Drain Current     - Continuous (TC = 25°C)                   - Continuous (TC = 100°C)	105	A
		78	A
IDM	Drain Current - Pulsed             (Note 1)	420	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy      (Note 2)	2430	mJ
IAR	Avalanche Current                   (Note 1)	105	A
EAR	Repetitive Avalanche Energy         (Note 1)	33	mJ
dv/dt	Peak Diode Recovery dv/dt           (Note 3)	4.5	V/ns
PD	Power Dissipation     (TC = 25°C)                      - Derate above 25°C	330	W
		2.2	W/
TJ,TSTG	Operating and Storage Temperature Range	-55 to+150
TL	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

Description

    These N-Channel enhancement mode power FQA90N10V2 field effect transis-tors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
    This advanced technology FQA90N10V2 has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. FQA90N10V2 is well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds(on) is required. 

Parameters:

Technical/Catalog Information	FQA90N10V2
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	105A
Rds On (Max) @ Id, Vgs	10 mOhm @ 52.5A, 10V
Input Capacitance (Ciss) @ Vds	6150pF @ 25V
Power - Max	330W
Packaging	Tube
Gate Charge (Qg) @ Vgs	191nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA90N10V2 FQA90N10V2