FQA8N80C

MOSFET 800V N-Ch Q-FET advance C-Series

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SeekIC No. : 00163934 Detail

FQA8N80C: MOSFET 800V N-Ch Q-FET advance C-Series

floor Price/Ceiling Price

Part Number:
FQA8N80C
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 8.4 A
Resistance Drain-Source RDS (on) : 1.55 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3P Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 800 V
Package / Case : TO-3P
Continuous Drain Current : 8.4 A
Resistance Drain-Source RDS (on) : 1.55 Ohms


Features:

* 8.4A, 800V, RDS(on)  = 1.55  @VGS  = 10 V
* Low gate charge ( typical 35 nC)
* Low Crss ( typical  13 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
  


Specifications

Symbol
Parameter
FQA8N80C
Units
VDSS
Drain-Source Voltage
800
V
ID
Drain Current     - Continuous (TC = 25°C)
                  - Continuous (TC = 100°C)
8.4
A
5.3
A
IDM
Drain Current - Pulsed             (Note 1)
33.6
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy      (Note 2)
850
mJ
IAR
Avalanche Current                   (Note 1)
8.4
A
EAR
Repetitive Avalanche Energy         (Note 1)
22
mJ
dv/dt
Peak Diode Recovery dv/dt           (Note 3)
4.0
V/ns
PD
Power Dissipation     (TC = 25°C)
                     - Derate above 25°C
220
W
1.75
W/
TJ,TSTG
Operating and Storage Temperature Range
-55 to+150
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
300



Description

    These N-Channel enhancement mode power FQA8N80C field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

    This advanced technology FQA8N80C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. FQA8N80C is well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.  


Parameters:

Technical/Catalog InformationFQA8N80C
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C8.4A
Rds On (Max) @ Id, Vgs1.55 Ohm @ 4.2A, 10V
Input Capacitance (Ciss) @ Vds 2050pF @ 25V
Power - Max220W
PackagingTube
Gate Charge (Qg) @ Vgs45nC @ 10V
Package / CaseTO-3P
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQA8N80C
FQA8N80C



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