FQA8N80

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 800 V
Package / Case : TO-3P
Resistance Drain-Source RDS (on) : 1.2 Ohms
Continuous Drain Current : 8.4 A


Features:

* 8.4A, 800V, R_DS(on)  = 1.2  @V_GS  = 10 V
* Low gate charge ( typical 44 nC)
* Low Crss ( typical  20 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability  


Specifications

Symbol	Parameter	FQA8N80	Units
VDSS	Drain-Source Voltage	800	V
ID	Drain Current     - Continuous (TC = 25°C)                   - Continuous (TC = 100°C)	8.4	A
		5.3	A
IDM	Drain Current - Pulsed             (Note 1)	33.6	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy      (Note 2)	850	mJ
IAR	Avalanche Current                   (Note 1)	8.4	A
EAR	Repetitive Avalanche Energy         (Note 1)	22	mJ
dv/dt	Peak Diode Recovery dv/dt           (Note 3)	4.0	V/ns
PD	Power Dissipation     (TC = 25°C)                      - Derate above 25°C	220	W
		1.75	W/
TJ,TSTG	Operating and Storage Temperature Range	-55 to+150
TL	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

Description

    These N-Channel enhancement mode power FQA8N80 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

    This advanced technology FQA8N80 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. FQA8N80 is well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.