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FQA7N80C_F109

MOSFET 800V N-Ch Q-FET advance C-Series

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SeekIC No. : 00146009 Detail

FQA7N80C_F109: MOSFET 800V N-Ch Q-FET advance C-Series

FQA7N80C_F109 Data Sheet

floor Price/Ceiling Price

US $ .82~1.18 / Piece | Get Latest Price
Part Number:
FQA7N80C_F109
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.18
  • $1.04
  • $.92
  • $.82
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 7 A
Resistance Drain-Source RDS (on) : 1.9 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3PN Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 7 A
Package / Case : TO-3PN
Drain-Source Breakdown Voltage : 800 V
Resistance Drain-Source RDS (on) : 1.9 Ohms


Parameters:

Technical/Catalog InformationFQA7N80C_F109
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C7A
Rds On (Max) @ Id, Vgs1.9 Ohm @ 3.5A, 10V
Input Capacitance (Ciss) @ Vds 1680pF @ 25V
Power - Max198W
PackagingTube
Gate Charge (Qg) @ Vgs35nC @ 10V
Package / CaseTO-3PN
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQA7N80C_F109
FQA7N80C_F109



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