FQA70N10

MOSFET 100V N-Channel QFET

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SeekIC No. : 00147758 Detail

FQA70N10: MOSFET 100V N-Channel QFET

floor Price/Ceiling Price

US $ 1.01~1.46 / Piece | Get Latest Price
Part Number:
FQA70N10
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.46
  • $1.3
  • $1.14
  • $1.01
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 70 A
Resistance Drain-Source RDS (on) : 0.025 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-3PN Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Resistance Drain-Source RDS (on) : 0.025 Ohms
Gate-Source Breakdown Voltage : +/- 25 V
Package / Case : TO-3PN
Continuous Drain Current : 70 A


Features:

* 70A, 100V, RDS(on) = 0.023 @VGS  = 10 V
* Low gate charge ( typical  85 nC)
* Low Crss ( typical  150 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
  
* 175 maximum junction temperature rating


Specifications

Symbol
Parameter
FQA70N10
Units
VDSS
Drain-Source Voltage
100
V
ID
Drain Current     - Continuous (TC = 25°C)
                  - Continuous (TC = 100°C)
70
A
49.5
A
IDM
Drain Current - Pulsed             (Note 1)
280
A
VGSS
Gate-Source Voltage
± 25
V
EAS
Single Pulsed Avalanche Energy      (Note 2)
 
mJ
IAR
Avalanche Current                   (Note 1)
70
A
EAR
Repetitive Avalanche Energy         (Note 1)
21.4
mJ
dv/dt
Peak Diode Recovery dv/dt           (Note 3)
6.0
V/ns
PD
Power Dissipation     (TC = 25°C)
                     - Derate above 25°C
214
W
1.43
W/
TJ,TSTG
Operating and Storage Temperature Range
-55 to+150
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
300



Description

    These N-Channel enhancement mode power FQA70N10 field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.
    This advanced technology FQA70N10 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQA70N10 is well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.  




Parameters:

Technical/Catalog InformationFQA70N10
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C70A
Rds On (Max) @ Id, Vgs23 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds 3300pF @ 25V
Power - Max214W
PackagingTube
Gate Charge (Qg) @ Vgs110nC @ 10V
Package / CaseTO-3P
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQA70N10
FQA70N10



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