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FQA48N20

MOSFET 200V N-Channel QFET

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SeekIC No. : 00159802 Detail

FQA48N20: MOSFET 200V N-Channel QFET

FQA48N20 Data Sheet

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Part Number:
FQA48N20
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 48 A
Resistance Drain-Source RDS (on) : 0.05 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3P Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 48 A
Package / Case : TO-3P
Resistance Drain-Source RDS (on) : 0.05 Ohms


Parameters:

Technical/Catalog InformationFQA48N20
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C48A
Rds On (Max) @ Id, Vgs50 mOhm @ 24A, 10V
Input Capacitance (Ciss) @ Vds 5000pF @ 25V
Power - Max280W
PackagingTube
Gate Charge (Qg) @ Vgs130nC @ 10V
Package / CaseTO-3P
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQA48N20
FQA48N20



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